- 您现在的位置：买卖IC网 > Sheet目录540 > ZXMN3A03E6TC (Diodes Inc)MOSFET N-CHAN 30V SOT23-6
ZXMN3A03E6
PACKAGE OUTLINE
PAD LAYOUT DETAILS
CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES.
PACKAGE DIMENSIONS
DIM
Millimeters
Inches
DIM
Millimeters
Inches
Min
Max
Min
Max
Min
Max
Min
Max
A
A1
A2
0.90
0.00
0.90
1.45
0.15
1.30
0.35
0
0.035
0.057
0.006
0.051
E
E1
L
2.60
1.50
0.10
3.00
1.75
0.60
0.102
0.059
0.004
0.118
0.069
0.002
b
C
0.35
0.09
0.50
0.20
0.014
0.0035
0.019
0.008
e
e1
0.95 REF
1.90 REF
0.037 REF
0.074 REF
D
2.80
3.00
0.110
0.118
L
0°
10°
0°
10°
? Zetex Semiconductors plc 2005
Europe
Zetex GmbH
Streitfeldstra?e 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 3 - OCTOBER 2005
7
SEMICONDUCTORS
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
ZXMN3A04DN8TC
MOSFET DUAL N-CHAN 30V 8SOIC
ZXMN3A04KTC
MOSFET N-CH 30V 18.4A DPAK
ZXMN3A06DN8TC
MOSFET DUAL N-CHAN 30V 8SOIC
ZXMN3A14FTA
MOSFET N-CH 30V 3.2A SOT23-3
ZXMN3AM832TA
MOSFET N-CHAN DUAL 30V 8MLP
ZXMN3AMCTA
MOSFET 2N-CH 30V 2.9A DFN
ZXMN3B01FTA
MOSFET N-CHAN 30V 2A SOT23-3
ZXMN3B04N8TC
MOSFET N-CHAN 30V 8SOIC
相关代理商/技术参数
ZXMN3A04DN8
制造商:Diodes Incorporated 功能描述:MOSFET DUAL N SO-8
ZXMN3A04DN8
制造商:Diodes Incorporated 功能描述:MOSFET N DUAL SO-8
ZXMN3A04DN8_02
制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3A04DN8TA
功能描述:MOSFET Dl 30V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3A04DN8TC
功能描述:MOSFET Dl 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3A04K
制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK
ZXMN3A04KTC
功能描述:MOSFET N-Ch 30 Volt 18.4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3A05N8TA
功能描述:MOSFET N-CH 30V 12A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件